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Proceedings Paper

Design analysis of lattice-matched AlInGaN-GaN QW for optimized intersubband absorption in the Mid-IR regime
Author(s): Ronald A. Arif; Ravi S. Tummidi; Yik Khoon Ee; Nelson Tansu
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Paper Abstract

Design analysis of III-Nitride based intersubband quantum well absorption in the mid-IR regime (&lgr; ~ 3-5 &mgr;m) is presented. The use of lattice-matched AlInGaN materials is advantageous because of its extremely fast intersubband relaxation time &tgr;rel ~ 150-fs. The ability to engineer lattice-matched AlInGaN layer with GaN should allow realization of multiple pairs of AlInGaN / GaN quantum well structures, which would otherwise be challenging due to the cracking issues that might develop in conventional multiple pairs AlGaN / GaN heterostructures. The large conduction band offset in III-Nitride heterostructures is also beneficial for minimizing dark current and thermal noise.

Paper Details

Date Published: 22 March 2007
PDF: 9 pages
Proc. SPIE 6468, Physics and Simulation of Optoelectronic Devices XV, 646803 (22 March 2007); doi: 10.1117/12.700767
Show Author Affiliations
Ronald A. Arif, Lehigh Univ. (United States)
Ravi S. Tummidi, Lehigh Univ. (United States)
Yik Khoon Ee, Lehigh Univ. (United States)
Nelson Tansu, Lehigh Univ. (United States)

Published in SPIE Proceedings Vol. 6468:
Physics and Simulation of Optoelectronic Devices XV
Marek Osinski; Fritz Henneberger; Yasuhiko Arakawa, Editor(s)

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