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Proceedings Paper

Broadband emission of GaAs/AlGaAs quantum-well superluminescent diode at 850 nm
Author(s): C. E. Dimas; C. T. Vishton; R. A. Merola; H. S. Djie; B. S. Ooi
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Paper Abstract

We report the fabrication and characterization of broad emission linewidth GaAs/AlGaAs quantum-well based superluminescent diodes. A photon absorption section and an optical amplifier sections are monolithically integrated on the device to suppress feedback oscillation and to amplifier the optical power, respectively. The device emitters at 850 nm peak wavelength, and exhibits a broad bandwidth of 65 nm, output power > 3.5 mW, and a spectral ripple of 0.5 dB at 20oC under continuous wave operation.

Paper Details

Date Published: 9 February 2007
PDF: 8 pages
Proc. SPIE 6475, Integrated Optics: Devices, Materials, and Technologies XI, 64751B (9 February 2007); doi: 10.1117/12.700747
Show Author Affiliations
C. E. Dimas, Lehigh Univ. (United States)
C. T. Vishton, Lehigh Univ. (United States)
R. A. Merola, Lehigh Univ. (United States)
H. S. Djie, Lehigh Univ. (United States)
B. S. Ooi, Lehigh Univ. (United States)


Published in SPIE Proceedings Vol. 6475:
Integrated Optics: Devices, Materials, and Technologies XI
Yakov Sidorin; Christoph A. Waechter, Editor(s)

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