Share Email Print
cover

Proceedings Paper

1.55µm InP-based electrically pumped VECSELs: comparison of buried and implanted tunnel junctions as current confinement schemes for the realization of large diameter devices
Author(s): A. Bousseksou; S. Bouchoule; M. El Kurdi; I. Sagnes; G. Beaudoin; P. Crozat; J. Jacquet
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

We report on the design, fabrication, and characterization of InP-based 1.55 &mgr;m wavelength large diameter (50 &mgr;m) electrically-pumped vertical external cavity surface emitting lasers (EP-VECSELs). The hybrid device consists of a half vertical cavity surface emitting laser (1/2-VCSEL) structure assembled with a concave dielectric external mirror. The 1/2- VCSEL is monolithically grown on InP substrate and includes a semiconductor Bragg mirror and a tunnel junction for electrical injection. Buried (BTJ) and ion implanted (ITJ) tunnel junction electrical confinement schemes are compared in terms of their thermal and electrical characteristics. Lower thermal resistance values are measured for BJT, but reduced current crowding effects and uniform current injection are evidenced for ITJ. Using the ITJ technique, we demonstrate Room-Temperature (RT) continuous-wave (CW) single transverse mode laser operation from 50-&mgr;m diameter EP-VECSEL devices. We show that the experimental laser optical output versus injected current (L-I) curves are well-reproduced by a simple analytical thermal model, consistent with the thermal resistance measurements performed on the 1/2-VCSEL structure. Our results indicate that thermal heating is the main mechanism limiting the maximum CW output power of 50-&mgr;m diameter VECSELs, rather than current injection inhomogeneity.

Paper Details

Date Published: 7 February 2007
PDF: 7 pages
Proc. SPIE 6484, Vertical-Cavity Surface-Emitting Lasers XI, 64840G (7 February 2007); doi: 10.1117/12.700654
Show Author Affiliations
A. Bousseksou, Lab. de Photonique et de Nanostructures, CNRS (France)
S. Bouchoule, Lab. de Photonique et de Nanostructures, CNRS (France)
M. El Kurdi, Institut d'Electronique Fondamentale, CNRS, Univ. Paris Sud (France)
I. Sagnes, Lab. de Photonique et de Nanostructures, CNRS (France)
G. Beaudoin, Lab. de Photonique et de Nanostructures, CNRS (France)
P. Crozat, Institut d'Electronique Fondamentale, CNRS, Univ. Paris Sud (France)
J. Jacquet, Lab. Matériaux Optiques, Photonique et Systèmes (France)


Published in SPIE Proceedings Vol. 6484:
Vertical-Cavity Surface-Emitting Lasers XI
Kent D. Choquette; James K. Guenter, Editor(s)

© SPIE. Terms of Use
Back to Top