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Proceedings Paper

Silicon p-i-n optical waveguide modulators fabricated on the silicon and silicon-on-insulator substrates
Author(s): Mao-Teng Hsu; Ricky W. Chuang; Jia-Ching Liao
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Paper Abstract

The fabrication and characterization of the p-i-n optical waveguide modulators on silicon-on-insulator (SOI) substrate were demonstrated. The modulation was based on the mechanism of carrier injection, or plasma dispersion effect. The corresponding p and n regions were defined in both types of silicon substrates (conventional p-doped and highly resistive SOI substrates with respective resistivities of &rgr;~7-10&OHgr;-cm and &rgr;~7000-10000&OHgr;-cm) using the spin-on-dopant (SOD) technique. The SOD diffusion process was conducted at 900-1000°C in nitrogen ambient. The diffusion time and temperature, and the resistivity of SOI substrate used were the primary parameters dictating the resultant dopant concentrations and diffusion depths. For the modulators fabricated with various waveguide widths and electrode lengths, the corresponding modulation index was enhanced in response to an increase in the electrode (or modulation) length and/or a decrease in waveguide width. The highest modulation index of ~4.15% was successfully achieved for a silicon p-i-n waveguide modulator with 5&mgr;m,wide waveguide and 7mm-long modulation electrode.

Paper Details

Date Published: 7 March 2007
PDF: 6 pages
Proc. SPIE 6475, Integrated Optics: Devices, Materials, and Technologies XI, 64751A (7 March 2007); doi: 10.1117/12.700601
Show Author Affiliations
Mao-Teng Hsu, National Cheng Kung Univ. (Taiwan)
Ricky W. Chuang, National Cheng Kung Univ. (Taiwan)
Jia-Ching Liao, National Cheng Kung Univ. (Taiwan)


Published in SPIE Proceedings Vol. 6475:
Integrated Optics: Devices, Materials, and Technologies XI
Yakov Sidorin; Christoph A. Waechter, Editor(s)

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