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Proceedings Paper

Characterization of the carrier localization confinement for InGaN/GaN multiple quantum well heterostructures with hydrogen-flow treatments
Author(s): Ta-Chuan Kuo; Wei-Jen Chen; Chih-Chun Ke; Cheng-Wei Hung; Hui-Tang Shen; Jen-Cheng Wang; Ya-Fen Wu; Tzer-En Nee
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Paper Abstract

Major developments in group-III nitride semiconductors have led to the commercial production of InGaN-based blue/green multiple quantum well (MQW) laser diodes (LDs) and light-emitting diodes (LEDs) for use in varied applications. The main approaches have been adopted to meet the increasing demands for improved efficiency in modern optoelectronic devices; enhancing the light extraction and the quantum efficiency. In this work, the improvement of carrier localization confinement in InGaN/GaN multiple quantum well structures has been achieved by introducing hydrogen-flow treatment into the growth procedures. To characterize the radiative recombination mechanisms in the active layers, the temperature-dependent photoluminescence (PL) of InGaN/GaN MQW structures have been measured. It has been found the strong temperature-dependent blueshift of the emission peak energy for the conventional MQW sample due to band filling effect. As the temperature increased, for the MQW sample with hydrogen-flow treatment, it has been found the emission peak of PL spectra exhibited an obvious red-blue-red shift, i.e., S-shaped shift. By introduction of hydrogen flow during the growth procedures, it has been expected not only to encourage atom coherence motions tend to three-dimension cluster formations but also to provide a stronger localization confinement ability to enhance exciton radiative recombinations in the band tail of the density of states. From the Arrhenius plot of PL intensity, compared with the value of 120 meV achieved for the conventional MQW sample, the higher activation energy value of 300 meV for the MQW sample with hydrogen-flow treatment implies that there was better confinement ability for the excess charge carriers.

Paper Details

Date Published: 8 February 2007
PDF: 6 pages
Proc. SPIE 6473, Gallium Nitride Materials and Devices II, 64730D (8 February 2007); doi: 10.1117/12.700532
Show Author Affiliations
Ta-Chuan Kuo, Chang Gung Univ. (Taiwan)
Wei-Jen Chen, Chang Gung Univ. (Taiwan)
Chih-Chun Ke, Chang Gung Univ. (Taiwan)
Cheng-Wei Hung, Chang Gung Univ. (Taiwan)
Hui-Tang Shen, Chang Gung Univ. (Taiwan)
Jen-Cheng Wang, Chang Gung Univ. (Taiwan)
Ya-Fen Wu, Chang Gung Univ. (Taiwan)
Tzer-En Nee, Chang Gung Univ. (Taiwan)


Published in SPIE Proceedings Vol. 6473:
Gallium Nitride Materials and Devices II
Hadis Morkoc; Cole W. Litton, Editor(s)

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