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Proceedings Paper

Narrow linewidth, high-power Al-free active region (&lgr; = 852nm) DFB laser diodes for atomic clocks and interferometry applications
Author(s): V. Ligeret; F. J. Vermersch; S. Bansropun; M. Lecomte; M. Calligaro; O. Parillaud; M. Krakowski
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Paper Abstract

Single frequency and single spatial mode diode lasers emitting at 852nm are strategic components for systems such as atomic clocks (positioning systems for navigation, in space atomic clock like Galileo or Pharao (cold atom), measurement of fundamental constants), or interferometry applications. We have developed the technological foundations of lasers at 852nm to address these different applications. These include an Al free active region, a single spatial mode ridge waveguide and a DFB (distributed feedback) structure. The device is a separate confinement heterostructure with a GaInP large optical cavity and a single compressive strained GaInAsP quantum well. For an AR-HR coated ridge Fabry Perot laser, we obtain a power of 230mW with M2=1.3. An optical power of 150mW was obtained at 854nm, 20°C for AR-HR coated devices. We obtain a single spatial mode emission and a SMSR over 50dB, both at 150mW. DFB Lasers at 852.12nm, corresponding to the D2 caesium transition, were then realised with a power of 40mW per facet, 37°C for uncoated devices. At 40mW, we determine a M2 value of 1.3. We measure a SMSR value around 50dB between 10°C and 80°C. On this last laser run, we obtain very homogeneous spectral linewidth values for five different lasers, measured with a Fabry Perot interferometer. We obtain at 20°C a low average linewidth value of 1.40MHz and 1.10MHz at respectively 40mW and 20mW, together with a low standard deviation of 0.1MHz. At 852.12nm (37°C, 40mW), a low linewidth value of 1MHz was measured, for one laser preliminary tested.

Paper Details

Date Published: 8 February 2007
PDF: 11 pages
Proc. SPIE 6485, Novel In-Plane Semiconductor Lasers VI, 64850D (8 February 2007); doi: 10.1117/12.700480
Show Author Affiliations
V. Ligeret, Alcatel Thales III-V Lab. (France)
F. J. Vermersch, Alcatel Thales III-V Lab. (France)
S. Bansropun, Thales Research and Technology, France (France)
M. Lecomte, Alcatel Thales III-V Lab. (France)
M. Calligaro, Alcatel Thales III-V Lab. (France)
O. Parillaud, Alcatel Thales III-V Lab. (France)
M. Krakowski, Alcatel Thales III-V Lab. (France)


Published in SPIE Proceedings Vol. 6485:
Novel In-Plane Semiconductor Lasers VI
Carmen Mermelstein; David P. Bour, Editor(s)

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