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Proceedings Paper

808 nm tapered diode lasers optimized for high output power and nearly diffraction-limited beam quality in pulse mode operation
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Paper Abstract

808 nm tapered lasers have been investigated under current pulsing conditions without thermal load. The pulse length was 100 ns. The lasers are based on a super-large optical cavity structure with a very small vertical divergence angle of 18° (FWHM). The output power, beam quality and spectral behavior of the lasers were measured. Resonator geometries with different ridge waveguide lengths and taper angles were used for the optimisation of output power and beam quality. As a result, 27 W output power has been achieved. Nearly diffraction-limited beam quality up to 9 W has been obtained with an optimised lateral geometry. At even higher power, spectral broadening and beam quality degradation of the lasers were observed.

Paper Details

Date Published: 7 February 2007
PDF: 10 pages
Proc. SPIE 6456, High-Power Diode Laser Technology and Applications V, 64560A (7 February 2007); doi: 10.1117/12.700325
Show Author Affiliations
Ole Bjarlin Jensen, Risø National Lab. (Denmark)
Andreas Klehr, Ferdinand-Braun-Institut für Höchstfrequenztechnik (Germany)
Frank Dittmar, Ferdinand-Braun-Institut für Höchstfrequenztechnik (Germany)
Bernd Sumpf, Ferdinand-Braun-Institut für Höchstfrequenztechnik (Germany)
Götz Erbert, Ferdinand-Braun-Institut für Höchstfrequenztechnik (Germany)
Peter E. Andersen, Risø National Lab. (Denmark)
Paul Michael Petersen, Risø National Lab. (Denmark)

Published in SPIE Proceedings Vol. 6456:
High-Power Diode Laser Technology and Applications V
Mark S. Zediker, Editor(s)

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