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Proceedings Paper

Nitride-based light-emitting diodes with p-AlInGaN surface layers prepared at various temperatures
Author(s): C. W. Kuo; C. M. Chen; C. H. Kuo; G. C. Chi
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Paper Abstract

We have prepared bulk p-AlInGaN layers and light emitting diodes (LEDs) with p-AlInGaN surface layers by metalorganic chemical vapor deposition (MOCVD). It was found that surfaces of the LEDs with p-AlInGaN layers were rough with high density of hexagonal pits. It was also found that pit width and pit density depend on the growth temperature of the p-AlInGaN layer. Furthermore, it was found that we can achieve 62% enhancement in output intensity from the LED with 820°C p-AlInGaN cap layer without increasing the LED operation voltage.

Paper Details

Date Published: 8 February 2007
PDF: 7 pages
Proc. SPIE 6473, Gallium Nitride Materials and Devices II, 64730U (8 February 2007); doi: 10.1117/12.700303
Show Author Affiliations
C. W. Kuo, National Central Univ. (Taiwan)
C. M. Chen, National Central Univ. (Taiwan)
C. H. Kuo, National Central Univ. (Taiwan)
G. C. Chi, National Central Univ. (Taiwan)

Published in SPIE Proceedings Vol. 6473:
Gallium Nitride Materials and Devices II
Hadis Morkoc; Cole W. Litton, Editor(s)

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