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Proceedings Paper

Fabrication and characterization of InAs quantum dot semiconductor optical amplifiers on InP operating at 1.5 μm
Author(s): Namje Kim; Jung Mi Oh; Donghan Lee; Suhyun Pyun; Deokgil Ko; Juhyung Yoon; Weonguk Jeong; Jongwon Jang
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Paper Abstract

Round and dome-shaped InAs/InGaAsP QDs on InP (100) substrate were used for semiconductor optical amplifier. The diameter, height and density of QDs were 32 nm, 3.4 nm and 1.1x1011 cm-2, respectively. The PL peak was controlled from 1.43 to 1.57 μm and the room temperature PL yield was quite high, about 25% of the low temperature value. We have fabricated SOAs with 2 ~ 4 μm ridge width using the above mentioned QDs. The QDSOAs had a barrier of 1.1 μm emitting InGaAsP and a simple separate confinement hetero-structure with InP cladding layer. The spacing between adjacent QD layers was 40 nm to ensure no vertical electronic coupling, confirmed by time resolved PL measurements. The small signal gain was about 20 dB and the typical gain peak was around 1.54 μm, which matches well with the optical communication band. We have also measured 3-dB gain bandwidth by using a broadband light source with 200 nm flat band and found that it was around 40 nm.

Paper Details

Date Published: 9 February 2007
PDF: 7 pages
Proc. SPIE 6481, Quantum Dots, Particles, and Nanoclusters IV, 64810H (9 February 2007); doi: 10.1117/12.700283
Show Author Affiliations
Namje Kim, Chungnam National Univ. (South Korea)
Jung Mi Oh, Chungnam National Univ. (South Korea)
Donghan Lee, Chungnam National Univ. (South Korea)
Suhyun Pyun, Sungkyunkwan Univ. (South Korea)
Deokgil Ko, Sungkyunkwan Univ. (South Korea)
Juhyung Yoon, Sungkyunkwan Univ. (South Korea)
Weonguk Jeong, Sungkyunkwan Univ. (South Korea)
Jongwon Jang, NanoEpi Technologies Corp. (South Korea)

Published in SPIE Proceedings Vol. 6481:
Quantum Dots, Particles, and Nanoclusters IV
Kurt G. Eyink; Diana L. Huffaker; Frank Szmulowicz, Editor(s)

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