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Proceedings Paper

Semiconductor saturable absorbers with recovery time controlled by lattice mismatch
Author(s): Mircea D. Guina; Soile Suomalainen; Tommi Hakulinen; Oleg G. Okhotnikov; Saulius Marcinkevicius
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Paper Abstract

We propose and demonstrate a new method to reduce the absorption recovery time of semiconductor saturable absorber mirrors operating at the 1060-nm wavelength range. The method is based on controlling the amount of nonradiative recombination centers within the absorbing region by incorporating an InGaP epitaxial layer with a relative large lattice mismatch to GaAs (~2.2 %). The defect density within the absorbing region can be controlled by the thickness of a GaAs buffer layer grown between the InGaP lattice mismatched layer and the InGaAs/GaAs quantum-wells. For thickness of the GaAs buffer of ~110 nm and ~570 nm the absorption recovery time was ~5 ps and ~10 ps, respectively. It is important to note that the fast recovery time was achieved without degrading the nonlinear optical properties of the saturable absorber mirror. The practicality of the structures was proved by demonstrating a reliable self-starting operation of a mode-locked Yb-doped fiber laser.

Paper Details

Date Published: 20 February 2007
PDF: 7 pages
Proc. SPIE 6469, Optical Components and Materials IV, 64690P (20 February 2007); doi: 10.1117/12.700273
Show Author Affiliations
Mircea D. Guina, Tampere Univ. of Technology (Finland)
RefleKron Ltd. (Finland)
Soile Suomalainen, Tampere Univ. of Technology (Finland)
Tommi Hakulinen, Tampere Univ. of Technology (Finland)
Oleg G. Okhotnikov, Tampere Univ. of Technology (Finland)
Saulius Marcinkevicius, Royal Institute of Technology (Sweden)

Published in SPIE Proceedings Vol. 6469:
Optical Components and Materials IV
Shibin Jiang; Michel J. F. Digonnet, Editor(s)

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