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Proceedings Paper

Study on metal/p-GaN contacts on p-i-n GaN-based UV detectors
Author(s): Xue Li; Jun Chen; Jingtong Xu; Haimei Gong; Jiaxiong Fang
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Paper Abstract

The contact of p-GaN was formed under different annealing condition, and its effect on p-i-n GaN-based detectors was studied by current-voltage (I-V) measurements and the response spectra. The parameters of metal/p-GaN interface were obtained by fitting the forward I-V curves. The results show that ideal factor of metal-semiconductor ( M-S) contacts annealed at 550°C for 3min is about 1.19, which means the formation of good ohmic contacts at the M-S interface and leads a lower turn-on voltage. But metal/p-GaN contacts have no obvious effect on response spectra of detectors.

Paper Details

Date Published: 9 February 2007
PDF: 4 pages
Proc. SPIE 6471, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XI and Semiconductor Photodetectors IV, 64711B (9 February 2007); doi: 10.1117/12.700018
Show Author Affiliations
Xue Li, Shanghai Institute of Technical Physics (China)
Jun Chen, Shanghai Institute of Technical Physics (China)
Jingtong Xu, Shanghai Institute of Technical Physics (China)
Haimei Gong, Shanghai Institute of Technical Physics (China)
Jiaxiong Fang, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 6471:
Ultrafast Phenomena in Semiconductors and Nanostructure Materials XI and Semiconductor Photodetectors IV
Marshall J. Cohen; Kong-Thon Tsen; Joseph P. Estrera; Jin-Joo Song, Editor(s)

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