The contact of p-GaN was formed under different annealing condition, and its effect on p-i-n GaN-based detectors was studied by current-voltage (I-V) measurements and the response spectra. The parameters of metal/p-GaN interface were obtained by fitting the forward I-V curves. The results show that ideal factor of metal-semiconductor ( M-S) contacts annealed at 550°C for 3min is about 1.19, which means the formation of good ohmic contacts at the M-S interface and leads a lower turn-on voltage. But metal/p-GaN contacts have no obvious effect on response spectra of detectors.

Date Published: 9 February 2007
PDF: 4 pages
Proc. SPIE 6471, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XI and Semiconductor Photodetectors IV, 64711B (9 February 2007); doi: 10.1117/12.700018

Published in SPIE Proceedings Vol. 6471:
Ultrafast Phenomena in Semiconductors and Nanostructure Materials XI and Semiconductor Photodetectors IV
Marshall J. Cohen; Kong-Thon Tsen; Joseph P. Estrera; Jin-Joo Song, Editor(s)