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Proceedings Paper

10W reliable operation of 808nm broad-area diode lasers by near-field distribution control in a multistripe contact geometry
Author(s): K. Paschke; S. Einfeldt; Chr. Fiebig; A. Ginolas; K. Häusler; P. Ressel; B. Sumpf; G. Erbert
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Paper Abstract

High-power diode lasers operating at 808 nm and consisting of a multiple ridge-waveguide structure have been fabricated. Lasers with this structure show a more stable far and near field pattern in comparison to conventional single stripe broad area lasers. A reliable continuous wave operation at room temperature over 8000 h at 8 W and 800 h at 10 W has been achieved with 200 &mgr;m stripe width devices.

Paper Details

Date Published: 7 February 2007
PDF: 5 pages
Proc. SPIE 6456, High-Power Diode Laser Technology and Applications V, 64560H (7 February 2007); doi: 10.1117/12.699901
Show Author Affiliations
K. Paschke, Ferdinand-Braun-Institut (Germany)
S. Einfeldt, Ferdinand-Braun-Institut (Germany)
Chr. Fiebig, Ferdinand-Braun-Institut (Germany)
A. Ginolas, Ferdinand-Braun-Institut (Germany)
K. Häusler, Ferdinand-Braun-Institut (Germany)
P. Ressel, Ferdinand-Braun-Institut (Germany)
B. Sumpf, Ferdinand-Braun-Institut (Germany)
G. Erbert, Ferdinand-Braun-Institut (Germany)

Published in SPIE Proceedings Vol. 6456:
High-Power Diode Laser Technology and Applications V
Mark S. Zediker, Editor(s)

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