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Proceedings Paper

Thermal analysis of AlGaN/GaN HFETs using electro-thermal simulation and micro-Raman spectroscopy
Author(s): Tatsuya Fujishima; Kaoru Inoue; Kenichi Kosaka; Akihiro Hinoki; Tomoyuki Yamada; Tadayoshi Tsuchiya; Junjiroh Kikawa; Shinichi Kamiya; Akira Suzuki; Tsutomu Araki; Yasushi Nanishi
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Paper Abstract

We report on investigation of self-heating effects in AlGaN/GaN HFETs (heterostructure field effect transistors) using numerical simulations and micro-Raman spectroscopy. In the numerical simulations, we used a temperature-dependent thermal conductivity for each constituent material. To reduce the size effect of the device, we added wide thermal diffusion regions to active device region. Both AlGaN/GaN HFETs on sapphire and SiC substrates were studied using both electro-thermal 2D (two-dimensional) simulations and also analytical 3D thermal simulations. Good agreements between the simulated and measured surface temperature distributions have been obtained, which supports the validity of simulation models. The simulated temperature distribution for HFETs on SiC substrates was found to have a much sharper peak than that on sapphire substrates. In addition, the region around the gate edge on the drain side usually showed a maximum temperature for the devices operating at drain voltages less than about 40 V, but this region shifted toward the drain side when the drain voltage was increased up to 50-80 V. These results show that micro-Raman spectroscopy can be used for high-resolution temperature measurements.

Paper Details

Date Published: 8 February 2007
PDF: 10 pages
Proc. SPIE 6473, Gallium Nitride Materials and Devices II, 647317 (8 February 2007); doi: 10.1117/12.699760
Show Author Affiliations
Tatsuya Fujishima, Ritsumeikan Univ. (Japan)
Kaoru Inoue, R&D Association for Future Electron Devices (Japan)
Kenichi Kosaka, Ritsumeikan Univ. (Japan)
Akihiro Hinoki, Ritsumeikan Univ. (Japan)
Tomoyuki Yamada, R&D Association for Future Electron Devices (Japan)
Tadayoshi Tsuchiya, R&D Association for Future Electron Devices (Japan)
Junjiroh Kikawa, R&D Association for Future Electron Devices (Japan)
Shinichi Kamiya, R&D Association for Future Electron Devices (Japan)
Akira Suzuki, Ritsumeikan Univ. (Japan)
R&D Association for Future Electron Devices (Japan)
Tsutomu Araki, Ritsumeikan Univ. (Japan)
Yasushi Nanishi, Ritsumeikan Univ. (Japan)

Published in SPIE Proceedings Vol. 6473:
Gallium Nitride Materials and Devices II
Hadis Morkoc; Cole W. Litton, Editor(s)

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