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Proceedings Paper

Vertical-illumination InGaAs/InP quasi-unipolar photodetector with high-bandwidth, quantum efficiency, and resistance to bandwidth collapse
Author(s): P. D. Yoder; E. J. Flynn; S. Sridharan
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Paper Abstract

We report new experimental and theoretical findings relating the design of dopant profile to the bandwidth and optical saturation power of high speed InGaAs/InP unity gain photodetectors. We demonstrate significant improvements in each of these performance metrics by means of quasi-unipolar operation, and interpret results on the basis of full band ensemble Monte Carlo simulation.

Paper Details

Date Published: 7 February 2007
PDF: 9 pages
Proc. SPIE 6468, Physics and Simulation of Optoelectronic Devices XV, 64680X (7 February 2007); doi: 10.1117/12.699707
Show Author Affiliations
P. D. Yoder, Georgia Institute of Technology (United States)
E. J. Flynn, CyOptics, Inc. (United States)
S. Sridharan, Georgia Institute of Technology (United States)

Published in SPIE Proceedings Vol. 6468:
Physics and Simulation of Optoelectronic Devices XV
Marek Osinski; Fritz Henneberger; Yasuhiko Arakawa, Editor(s)

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