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Proceedings Paper

Characterization of Ag doped p-type ZnO films
Author(s): G. H. Kim; B. D. Ahn; D. L. Kim; K. H. Jung; S. Y. Lee
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Paper Abstract

Ag-doped ZnO thin films have been fabricated by pulsed laser deposition. Thermal analysis and X-ray photoelectron spectroscopy (XPS) were systematically investigated to verify the doping mechanism of Ag doped ZnO thin film depending on deposition temperature. The fabricated p-type Ag doped ZnO films shows the hole concentration in the range from 4.9x1016 to 6.0x1017 cm-3.

Paper Details

Date Published: 20 February 2007
PDF: 4 pages
Proc. SPIE 6474, Zinc Oxide Materials and Devices II, 647409 (20 February 2007); doi: 10.1117/12.699613
Show Author Affiliations
G. H. Kim, Yonsei Univ. (South Korea)
B. D. Ahn, Yonsei Univ. (South Korea)
D. L. Kim, Yonsei Univ. (South Korea)
K. H. Jung, Yonsei Univ. (South Korea)
S. Y. Lee, Yonsei Univ. (South Korea)

Published in SPIE Proceedings Vol. 6474:
Zinc Oxide Materials and Devices II
Ferechteh Hosseini Teherani; Cole W. Litton, Editor(s)

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