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Proceedings Paper

Next-generation active and passive heatsink design for diode lasers
Author(s): Raman Srinivasan; Robert Miller; Kiran Kuppuswamy; Touyen Nguyen; Yongdan Hu; Hanxuan Li; Dennis Brown; Terry Towe; Bob Morris; Ed Wolak; Jim Harrison
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Paper Abstract

Successful thermal and stress management of edge-emitting GaAs-based diode lasers is key to their performance and reliability in high-power operation. Complementary to advanced epitaxial structures and die-fabrication processes, next-generation heatsink designs are required to meet the requirements of emerging applications. In this paper, we detail the development of both active and passive heatsinks designed to match the coefficient of thermal expansion (CTE) of the laser die. These CTE-matched heatsinks also offer low thermal resistance, compatibility with AuSn bonding and improved manufacturability. Early data representing the performance of high-power devices on the new heatsinks are included in the presentation. Among the designs are a water-cooled, mini-channel heatsink with a CTE of 6.8 ppm/°C (near to the nominal 6.5 ppm/°C CTE of GaAs) and a thermal resistance of 0.43 °C/W (assuming a 27%-fill-factor diode-laser bar with a cavity length of 2 mm). The water flow in the heatsink is isolated from the electrical potential, eliminating the possibility of electrolytic corrosion. An additional feature of the integrated design is the reduction in required assembly steps. Our next-generation, passive, CTE-matched heatsink employs a novel design to achieve a reduction of 16% in thermal resistance (compared to the predecessor commercial product). CTE's can be engineered to fall in the range of 6.2-7.2 ppm/°C on the bar mounting surface. Comparisons between simulated performance and experimental data (both in CW and long-pulse operation) will be presented for several new heat-sink designs.

Paper Details

Date Published: 14 February 2007
PDF: 10 pages
Proc. SPIE 6456, High-Power Diode Laser Technology and Applications V, 64561D (14 February 2007); doi: 10.1117/12.699416
Show Author Affiliations
Raman Srinivasan, Spectra-Physics Semiconductor Lasers (United States)
Robert Miller, Spectra-Physics Semiconductor Lasers (United States)
Kiran Kuppuswamy, Spectra-Physics Semiconductor Lasers (United States)
Touyen Nguyen, Spectra-Physics Semiconductor Lasers (United States)
Yongdan Hu, Spectra-Physics Semiconductor Lasers (United States)
Hanxuan Li, Spectra-Physics Semiconductor Lasers (United States)
Dennis Brown, Spectra-Physics Semiconductor Lasers (United States)
Terry Towe, Spectra-Physics Semiconductor Lasers (United States)
Bob Morris, Spectra-Physics Semiconductor Lasers (United States)
Ed Wolak, Spectra-Physics Semiconductor Lasers (United States)
Jim Harrison, Spectra-Physics Semiconductor Lasers (United States)


Published in SPIE Proceedings Vol. 6456:
High-Power Diode Laser Technology and Applications V
Mark S. Zediker, Editor(s)

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