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Proceedings Paper

High brightness GaSb-based optically pumped semiconductor disk lasers at 2.3 µm
Author(s): M. Rattunde; N. Schulz; C. Ritzenthaler; B. Rösener; C. Manz; K. Köhler; E. Wörner; J. Wagner
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Paper Abstract

We report on recent advances in the performance of GaSb-based vertical-external-cavity surface-emitting lasers (VECSELs) emitting at wavelengths around 2.3 μm. Barrier-pumped VECSELs have been fabricated and analysed, which incorporates a diamond intra-cavity heat spreader as an efficient means for heat extraction from the active region. A maximum output power of 1.5 W has been achieved at a heat sink temperature of -20°C and still more than 1 W at 10°C. Two VECSEL structures with different spectral offsets ▵λ between the microcavity resonance and the maximum of the gain spectrum have been examined in particular. The results clearly show that the proper choice of this offset ▵λ is critical for an optimization of the high-power performance of the VECSEL, e.g. maximizing the output power before thermal rollover.

Paper Details

Date Published: 2 February 2007
PDF: 10 pages
Proc. SPIE 6479, Quantum Sensing and Nanophotonic Devices IV, 647915 (2 February 2007); doi: 10.1117/12.699208
Show Author Affiliations
M. Rattunde, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
N. Schulz, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
C. Ritzenthaler, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
B. Rösener, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
C. Manz, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
K. Köhler, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
E. Wörner, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
J. Wagner, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)


Published in SPIE Proceedings Vol. 6479:
Quantum Sensing and Nanophotonic Devices IV
Manijeh Razeghi; Gail J. Brown, Editor(s)

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