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Proceedings Paper

Optimization of nanoscale phenomena in AlGaN for improved UV emitters
Author(s): M. Wraback; G. A. Garrett; A. V. Sampath; H. Shen
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Paper Abstract

We have developed AlGaN films deposited by plasma assisted molecular beam epitaxy (PA-MBE) that can possess enhanced internal quantum efficiency (> 30%) due to the presence of nanometer scale compositional inhomogeneities (NCI-AlGaN) within a wider bandgap matrix that inhibit nonradiative recombination through the large defect densities (> 1010cm-2) in these materials. Time- and temperature-dependent studies of the UV photoluminescence from these NCI AlGaN films as a function of growth conditions have been performed with the goal of optimizing the emission efficiency. Measurements of radiative and nonradiative lifetimes in conjunction with modeling indicate that the NCI AlGaN inherently combines inhibition of nonradiative recombination with reduction of radiative lifetime, providing a potentially higher efficiency UV emitter active region.

Paper Details

Date Published: 2 February 2007
PDF: 9 pages
Proc. SPIE 6479, Quantum Sensing and Nanophotonic Devices IV, 64791H (2 February 2007); doi: 10.1117/12.699181
Show Author Affiliations
M. Wraback, U.S. Army Research Lab. (United States)
G. A. Garrett, U.S. Army Research Lab. (United States)
A. V. Sampath, U.S. Army Research Lab. (United States)
H. Shen, U.S. Army Research Lab. (United States)

Published in SPIE Proceedings Vol. 6479:
Quantum Sensing and Nanophotonic Devices IV
Manijeh Razeghi; Gail J. Brown, Editor(s)

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