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Proceedings Paper

High-power high-brightness high-reliability laser diodes emitting at 800-1000 nm
Author(s): Dan A. Yanson; John H. Marsh; Stephen Najda; Stewart D. McDougall; Hassan Fadli; Graeme Masterton; Bocang Qiu; Olek P. Kowalski; Gianluca Bacchin; Gordon McKinnon
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Paper Abstract

In this paper we report the development of high power high brightness semiconductor laser chips using a combination of quantum well intermixing (QWI) and novel laser designs including laterally unconfined non-absorbing mirrors (LUNAM). We demonstrate both multi-mode and single-mode lasers with increased power and brightness and reliability performance for the wavelengths of 980 nm, 940 nm, 830 nm and 808 nm.

Paper Details

Date Published: 7 February 2007
PDF: 8 pages
Proc. SPIE 6456, High-Power Diode Laser Technology and Applications V, 64560L (7 February 2007); doi: 10.1117/12.699038
Show Author Affiliations
Dan A. Yanson, Intense, Ltd. (United Kingdom)
John H. Marsh, Intense, Ltd. (United Kingdom)
Stephen Najda, Intense, Ltd. (United Kingdom)
Stewart D. McDougall, Intense, Ltd. (United Kingdom)
Hassan Fadli, Intense, Ltd. (United Kingdom)
Graeme Masterton, Intense, Ltd. (United Kingdom)
Bocang Qiu, Intense, Ltd. (United Kingdom)
Olek P. Kowalski, Intense, Ltd. (United Kingdom)
Gianluca Bacchin, Intense, Ltd. (United Kingdom)
Gordon McKinnon, Intense, Ltd. (United Kingdom)


Published in SPIE Proceedings Vol. 6456:
High-Power Diode Laser Technology and Applications V
Mark S. Zediker, Editor(s)

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