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Proceedings Paper

Comprehensive study of reliability of InGaN-based laser diodes
Author(s): L. Marona; M. Sarzynski; P. Wi?niewski; M. Leszczy?ski; P. Prystawko; I. Grzegory; T. Suski; S. Porowski; R. Czernecki; G. Kamler; A. Czerwinski; M. Pluska; J. Ratajczak; P. Perlin
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Paper Abstract

In this work we present the reliability study of InGaN violet laser diodes fabricated by metaloorganic vapor phase epitaxy on high pressure grown bulk GaN crystals. Our devices were tested both in cw and a pulse regime. We found out that the degradation rate of the laser diodes does not depend on the photon density (at least up to around 50 mW of an output optical power). We show also that the main factor influencing the degradation rate is an operation current density on which the degradation rate depends exponentially. Additionally, we reconfirm that the degradation follows the square root dependence between threshold current and time suggesting that the diffusion may be a main mechanism causing damage of diodes.

Paper Details

Date Published: 8 February 2007
PDF: 12 pages
Proc. SPIE 6485, Novel In-Plane Semiconductor Lasers VI, 648504 (8 February 2007); doi: 10.1117/12.699001
Show Author Affiliations
L. Marona, High Pressure Research Ctr., Unipress (Poland)
M. Sarzynski, High Pressure Research Ctr., Unipress (Poland)
P. Wi?niewski, High Pressure Research Ctr., Unipress (Poland)
M. Leszczy?ski, High Pressure Research Ctr., Unipress (Poland)
TopGaN, Ltd. (Poland)
P. Prystawko, High Pressure Research Ctr., Unipress (Poland)
I. Grzegory, High Pressure Research Ctr., Unipress (Poland)
TopGaN, Ltd. (Poland)
T. Suski, High Pressure Research Ctr., Unipress (Poland)
S. Porowski, High Pressure Research Ctr., Unipress (Poland)
R. Czernecki, TopGaN, Ltd. (Poland)
G. Kamler, High Pressure Research Ctr., Unipress (Poland)
A. Czerwinski, Institute of Electron Technology (Poland)
M. Pluska, Institute of Electron Technology (Poland)
J. Ratajczak, Institute of Electron Technology (Poland)
P. Perlin, High Pressure Research Ctr., Unipress (Poland)
TopGaN, Ltd. (Poland)


Published in SPIE Proceedings Vol. 6485:
Novel In-Plane Semiconductor Lasers VI
Carmen Mermelstein; David P. Bour, Editor(s)

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