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Lanthanide impurity level location in GaN, AlN, and ZnO
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Paper Abstract

A method that has proven succesful in locating the energy levels of divalent and trivalent lanthanide ions (Ce, Pr,..., Eu,...Yb, Lu) in wide band gap inorganic compounds like YPO4 and CaF2 is applied to locate lanthanide levels in the wideband semiconductors GaN, AlN, their solid solutions AlxGa1-xN, and ZnO. The proposed schemes provide a description of relevant optical and luminescence properties of these lanthanide doped semiconductors. Especially, the relation between thermal quenching of Tb3+ emission and the location of the energy levels is explained.

Paper Details

Date Published: 8 February 2007
PDF: 10 pages
Proc. SPIE 6473, Gallium Nitride Materials and Devices II, 647313 (8 February 2007); doi: 10.1117/12.698977
Show Author Affiliations
P. Dorenbos, Delft Univ. of Technology (Netherlands)
E. van der Kolk, Delft Univ. of Technology (Netherlands)

Published in SPIE Proceedings Vol. 6473:
Gallium Nitride Materials and Devices II
Hadis Morkoc; Cole W. Litton, Editor(s)

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