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Proceedings Paper

Vacancy defect distributions in bulk ZnO crystals
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Paper Abstract

We have used positron annihilation spectroscopy to study vacancy defects in ZnO single crystals grown by various methods from both commercial and academic sources. The combination of positron lifetime and Doppler broadening techniques with theoretical calculations provides the means to deduce both the identities and the concentrations of the vacancies. The annihilation characteristics of the Zn and O vacancies have been determined by studying electronirradiated ZnO grown by the seeded vapor phase technique. The different ZnO samples were grown with the following techniques: the hydrothermal growth method, the seeded vapor phase technique, growth from melt (skull melting technique), and both conventional and contactless chemical vapor transport. We present a comparison of the vacancy defects and their concentrations in these materials.

Paper Details

Date Published: 20 February 2007
PDF: 11 pages
Proc. SPIE 6474, Zinc Oxide Materials and Devices II, 647413 (20 February 2007); doi: 10.1117/12.698902
Show Author Affiliations
Filip Tuomisto, Helsinki Univ. of Technology (Finland)
David C. Look, Wright State Univ. (United States)
Air Force Research Lab. (United States)

Published in SPIE Proceedings Vol. 6474:
Zinc Oxide Materials and Devices II
Ferechteh Hosseini Teherani; Cole W. Litton, Editor(s)

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