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Proceedings Paper

Low resistance and high reflectivity Al based reflectors for p-GaN flip process
Author(s): Seung Wan Chae; Kun Yoo Ko; Dong Woo Kim; Seok Min Hwang; Hyung Jin Park; Je Won Kim; Yong Chun Kim
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Paper Abstract

We report a high-power light-emitting diode (LED) scheme based on aluminum (Al) reflector, commonly used as an n-GaN ohmic contact. The Cu doped In2O3 (5nm)/ITO (380nm) interlayer was deposited by electron beam evaporator and subsequently annealed at 500°C After annealing, we sputtered Al (400nm thick)/Ti-W (30nm) on the ITO interlayer to reflect the visible light. From the systematic experiment and the following analyses with InGaN/GaN multiple- quantum-well (MQW) LEDs, the reflectance of electrode based Al was measured to be ~ 90% at a wavelength of 450nm, which is higher than that of the common used Ni/Ag/Pt scheme. The forward- bias voltages of CIO/ITO/Al/Ti-W pelectrodes were as low as 3.2-3.3V. Furthermore, Al reflector showed higher thermal stability and lower leakage currents than those of typical Ag reflector, in which the mean leakage current of Ni/Ag and CIO/ITO/Al/Ti-W contacts were estimated to be 0.54, 0.12uA at an injection current of -5V, respectively.

Paper Details

Date Published: 13 February 2007
PDF: 5 pages
Proc. SPIE 6486, Light-Emitting Diodes: Research, Manufacturing, and Applications XI, 648617 (13 February 2007); doi: 10.1117/12.698796
Show Author Affiliations
Seung Wan Chae, Samsung Electro-Mechanics Co., Ltd. (South Korea)
Kun Yoo Ko, Samsung Electro-Mechanics Co., Ltd. (South Korea)
Dong Woo Kim, Samsung Electro-Mechanics Co., Ltd. (South Korea)
Seok Min Hwang, Samsung Electro-Mechanics Co., Ltd. (South Korea)
Hyung Jin Park, Samsung Electro-Mechanics Co., Ltd. (South Korea)
Je Won Kim, Samsung Electro-Mechanics Co., Ltd. (South Korea)
Yong Chun Kim, Samsung Electro-Mechanics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 6486:
Light-Emitting Diodes: Research, Manufacturing, and Applications XI
Klaus P. Streubel; Heonsu Jeon, Editor(s)

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