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Electronic and thermal properties of Sb-based QCLs operating in the first atmospheric window
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Paper Abstract

We report on the experimental study of the electronic and thermal properties in state of art Sb-based quantum-cascade lasers (QCLs) operating in the range 4.3-4.9 &mgr;m. This information has been obtained by investigating the band-to-band photoluminescence signals, detected by means of an InGaAs-array detector. This technique allowed to probe the spatial distribution of conduction electrons as a function of the applied voltage and to correlate the quantum design of devices with their thermal performance. We demonstrate that electron transport in these structures may be insufficient, thus affecting the tunneling of electrons and the electronic recycling and cascading scheme. Finally, we present the first measurement of the electronic and lattice temperatures and of the electron-lattice coupling in Sb-based QCLs based on a quaternary-alloy. We extracted the thermal resistance (RL = 9.6 K/W) and the electrical power dependence of the electronic temperature (Re = 12.5 K/W) of Ga0.47In0.53As/Al0.62Ga0.38As1-xSbx structures operating at 4.9 &mgr;m, in the lattice temperature range 60 K - 90 K. The corresponding electron-lattice coupling &agr;= 9.5 Kcm2/kA) reflects the efficient electronic cooling via optical phonon emission. The experimental normalized thermal resistance RL* = 3.9 Kxcm/W demonstrates the beneficial use of quaternary thicker barriers in terms of device thermal management.

Paper Details

Date Published: 27 February 2007
PDF: 11 pages
Proc. SPIE 6485, Novel In-Plane Semiconductor Lasers VI, 648508 (27 February 2007); doi: 10.1117/12.698576
Show Author Affiliations
Miriam Serena Vitiello, Univ. degli Studi di Bari (Italy)
Gaetano Scamarcio, Univ. degli Studi di Bari (Italy)
Vincenzo Spagnolo, INFM Regional Lab., LIT, and Politecnico di Bari (Italy)
Quankui Yang, Fraunhofer Institute for Applied Solid State Physics (Germany)
Christian Manz, Fraunhofer Institute for Applied Solid State Physics (Germany)
Joachim Wagner, Fraunhofer Institute for Applied Solid State Physics (Germany)
Dmitry G. Revin, Univ. of Sheffield (United Kingdom)
John Cockburn, Univ. of Sheffield (United Kingdom)

Published in SPIE Proceedings Vol. 6485:
Novel In-Plane Semiconductor Lasers VI
Carmen Mermelstein; David P. Bour, Editor(s)

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