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Proceedings Paper

Modeling mid-infrared continuous-wave silicon-based Raman lasers
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Paper Abstract

We present the first modeling results for the Stokes and anti-Stokes output of a mid-infrared continuous-wave silicon-based Raman laser. These emission characteristics are generated by the use of an iterative resonator model, the loss terms of which we adapted for the case of silicon-based Raman lasers operating in the mid-infrared spectral domain. These loss terms contain besides linear losses also the three-photon absorption losses that occur in this type of lasers. We discuss the behavior of this three-photon absorption mechanism and its influence on both the Stokes and anti-Stokes output. Finally, we compare these emission characteristics with the corresponding simulation results for a near-infrared silicon-based Raman laser in which linear losses, two-photon absorption losses and free carrier absorption losses occur.

Paper Details

Date Published: 14 February 2007
PDF: 10 pages
Proc. SPIE 6455, Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications VI, 64550U (14 February 2007); doi: 10.1117/12.698488
Show Author Affiliations
Nathalie Vermeulen, Vrije Univ. Brussel (Belgium)
Christof Debaes, Vrije Univ. Brussel (Belgium)
Hugo Thienpont, Vrije Univ. Brussel (Belgium)


Published in SPIE Proceedings Vol. 6455:
Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications VI
Peter E. Powers, Editor(s)

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