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Proceedings Paper

Iterative resonator model describing the Stokes and anti-Stokes emission of a continuous-wave silicon-based Raman laser
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Paper Abstract

We present a novel numerical model that allows determining the Stokes and anti-Stokes emission characteristics of a continuous-wave silicon-based Raman laser. This so-called iterative resonator model evaluates for every half roundtrip time the longitudinal distribution of the intra-cavity pump, Stokes and anti-Stokes fields propagating in forward and backward directions, while taking into account the two-photon absorption losses and free carrier absorption losses occurring in the silicon laser medium. Furthermore, we demonstrate that our model exhibits important advantages in comparison with the power distribution model used for silicon-based Raman lasers. Finally, we present the first numerical simulation results for a silicon-based Raman laser emitting both Stokes and anti-Stokes photons.

Paper Details

Date Published: 14 February 2007
PDF: 10 pages
Proc. SPIE 6455, Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications VI, 64550N (14 February 2007); doi: 10.1117/12.698484
Show Author Affiliations
Nathalie Vermeulen, Vrije Univ. Brussel (Belgium)
Christof Debaes, Vrije Univ. Brussel (Belgium)
Hugo Thienpont, Vrije Univ. Brussel (Belgium)


Published in SPIE Proceedings Vol. 6455:
Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications VI
Peter E. Powers, Editor(s)

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