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Proceedings Paper

Tunable broad-area InGaN laser diodes in external cavity
Author(s): K. Komorowska; P. Wisniewski; R. Czernecki; P. Prystawko; M. Leszczynski; T. Suski; I. Grzegory; S. Porowski; S. Grzanka; M. Maszkowicz; P. Perlin
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Paper Abstract

We have used pulsed operation, wide area InGaN laser diodes in conjunction with Littrow type external cavity to build a tunable, single mode laser operating around 398 nm. Special coatings had been applied to the device - antireflection coating on the output mirror and high - reflector on the back facet. The tuning range of this device was 5.5 nm, the maximum output power reached 40mW in a single mode operation. This value compares well with the output power of an uncoupled laser diode -170mW. The coupling between the external cavity and the internal resonator is estimated to be around 2.5% for a waveguide dimensions of 20 x 0.3 x 500&mgr;m3.

Paper Details

Date Published: 8 February 2007
PDF: 5 pages
Proc. SPIE 6485, Novel In-Plane Semiconductor Lasers VI, 648502 (8 February 2007); doi: 10.1117/12.698285
Show Author Affiliations
K. Komorowska, Institute of High Pressure Physics, Unipress (Poland)
P. Wisniewski, Institute of High Pressure Physics, Unipress (Poland)
R. Czernecki, TopGaN, Ltd. (Poland)
P. Prystawko, Institute of High Pressure Physics, Unipress (Poland)
M. Leszczynski, Institute of High Pressure Physics, Unipress (Poland)
TopGaN, Ltd. (Poland)
T. Suski, Institute of High Pressure Physics, Unipress (Poland)
I. Grzegory, Institute of High Pressure Physics, Unipress (Poland)
TopGaN, Ltd. (Poland)
S. Porowski, Institute of High Pressure Physics, Unipress (Poland)
S. Grzanka, TopGaN, Ltd. (Poland)
M. Maszkowicz, Warsaw Univ. of Technology (Poland)
P. Perlin, Institute of High Pressure Physics, Unipress (Poland)
TopGaN, Ltd. (Poland)


Published in SPIE Proceedings Vol. 6485:
Novel In-Plane Semiconductor Lasers VI
Carmen Mermelstein; David P. Bour, Editor(s)

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