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Proceedings Paper

Cr:ZnSe laser crystal grown by Bridgeman technique: characteristics and laser performance
Author(s): Petr Koranda; Helena Jelínková; Jan Šulc; Michal Nemec; Maxim E. Doroshenko; Tasoltan T. Basiev; Vitaly K. Komar; Andriy S. Gerasimenko; Vyacheslav M. Puzikov
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Paper Abstract

Cr:ZnSe crystals grown by the Bridgeman technique from the melt in inert gas (argon) under pressure were characterized and utilized as effective laser active material. Large crystalline boules with a necessary concentration of Cr2+ ions 1019 cm-3, practically homogeneously distributed throughout the crystal bulk (50 mm in diameter and up to 100 mm in length), were prepared. For the laser evaluation the Cr:ZnSe samples in the form of 6 mm thick blocks were polished. Cr:ZnSe laser was longitudinally coherently pumped either with flashlamp-pumped Er:YAP laser radiation (emission wavelength 1658 nm) or with diode-pumped Tm:YAP laser radiation (emission wavelength 1980 nm). In the first case, the Cr:ZnSe laser was pumped with radiation of Er:YAP laser working in free-running regime (pulse length 200 &mgr;s, pulse energy 200 mJ, repetition rate 1 Hz). The maximal obtained Cr:ZnSe laser pulse energy was 14 mJ (slope-efficiency 73%). Using the dispersive prism inside the resonator, the output laser radiation was broadly tunable from 2150 nm up to 2600 nm. In the second case, the Cr:ZnSe laser was pumped with radiation of diode-pumped solid-state Tm:YAP laser working in pulsed as well as continuous-wave regime, for which the maximal obtained Cr:ZnSe laser output power was 200 mW (slope-efficiency 67%). The output spectrum of generated radiation covered the range from 2100 nm to 2400 nm. The temporal profile and spatial structure of laser beam were measured. The Cr:ZnSe crystal grown by the Bridgeman method was demonstrated as an efficient broadly tunable laser active material generated radiation in the mid-infrared spectrum and operated in room-temperature.

Paper Details

Date Published: 20 February 2007
PDF: 7 pages
Proc. SPIE 6451, Solid State Lasers XVI: Technology and Devices, 64510M (20 February 2007); doi: 10.1117/12.698154
Show Author Affiliations
Petr Koranda, Czech Technical Univ. in Prague (Czech Republic)
Helena Jelínková, Czech Technical Univ. in Prague (Czech Republic)
Jan Šulc, Czech Technical Univ. in Prague (Czech Republic)
Michal Nemec, Czech Technical Univ. in Prague (Czech Republic)
Maxim E. Doroshenko, General Physics Institute (Russia)
Tasoltan T. Basiev, General Physics Institute (Russia)
Vitaly K. Komar, Institute for Single Crystals (Ukraine)
Andriy S. Gerasimenko, Institute for Single Crystals (Ukraine)
Vyacheslav M. Puzikov, Institute for Single Crystals (Ukraine)


Published in SPIE Proceedings Vol. 6451:
Solid State Lasers XVI: Technology and Devices
Hanna J. Hoffman; Ramesh K. Shori; Norman Hodgson, Editor(s)

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