Share Email Print
cover

Proceedings Paper

Linearity of the photocurrent response with light intensity for silicon PIN photodiode array
Author(s): Ilja Goushcha; Bernd Tabbert; Alexander O. Goushcha
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

The photosensitivity linearity of a back-illuminated, pin photodiode arrays built on 75-&mgr;m thick single silicon dies is discussed. Photosensitivity linearity measurements were performed in the range of input light fluxes above ~1nW/pixel and the linearity was found to be better than 0.01% within the spectral range from 450 to 1000 nm. For lower light fluxes, the non-linearity of the photo-sensitivity was smaller than the noise current of the array pixels and different methods should be applied to measure the photosensitivity linearity with an accuracy of better than 0.1%. The theoretical limits for the sensitivity linearity measurements are discussed. This work describes also the automatic probe system for opto-electrical testing of the front- and backside illuminated photodiode arrays. The system allows 100% testing of wafers and dies before die attach. The system is configured to work on wafers up to 150 mm in size or single multi-pixel dies.

Paper Details

Date Published: 9 February 2007
PDF: 8 pages
Proc. SPIE 6471, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XI and Semiconductor Photodetectors IV, 647111 (9 February 2007); doi: 10.1117/12.698022
Show Author Affiliations
Ilja Goushcha, Semicoa (United States)
Bernd Tabbert, Semicoa (United States)
Alexander O. Goushcha, Semicoa (United States)


Published in SPIE Proceedings Vol. 6471:
Ultrafast Phenomena in Semiconductors and Nanostructure Materials XI and Semiconductor Photodetectors IV
Marshall J. Cohen; Joseph P. Estrera; Kong-Thon Tsen; Jin-Joo Song, Editor(s)

© SPIE. Terms of Use
Back to Top