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Proceedings Paper

Low-threshold current low-resistance 1.3 µm InAs–InGaAs quantum-dot VCSELs with fully doped DBRs grown by MBE
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Paper Abstract

The processing technology of 1.3&mgr;m InAs-InGaAs quantum-dot VCSELs with fully doped DBRs grown by MBE will be demonstrated. The threshold currents of the fabricated devices with 10 &mgr;m oxide-confined aperture are 0.7mA, which correspond to 890A/cm2 threshold current density. And the threshold voltage of the device is 1.03V and maximum output power is 33 &mgr;W. The series resistance is 85 &OHgr; which is 10 times lower then our preliminary work and 3 times lower then intracavity contacted InAs-InGaAs quantum-dot VCSEL. This relatively lower resistance can even comparable with the best result reported in InGaAs oxide-confined VCSELs with intracavity contact.

Paper Details

Date Published: 8 February 2007
PDF: 8 pages
Proc. SPIE 6484, Vertical-Cavity Surface-Emitting Lasers XI, 64840E (8 February 2007); doi: 10.1117/12.697732
Show Author Affiliations
Hsin-Chieh Yu, National Cheng Kung Univ. (Taiwan)
Jyh-Shyang Wang, Chung Yuan Christian Univ. (Taiwan)
Yan-Kuin Su, National Cheng Kung Univ. (Taiwan)
Shoou-Jinn Chang, National Cheng Kung Univ. (Taiwan)
Hao-Chung Kuo, National Chiao Tung Univ. (Taiwan)
Fang-I Lai, National Chiao Tung Univ. (Taiwan)
Y. H. Chang, National Chiao Tung Univ. (Taiwan)
Hong-Pin D. Yang, Industrial Technology Research Institute (Taiwan)

Published in SPIE Proceedings Vol. 6484:
Vertical-Cavity Surface-Emitting Lasers XI
Kent D. Choquette; James K. Guenter, Editor(s)

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