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Proceedings Paper

670 nm semiconductor lasers for lithium spectroscopy with 1W
Author(s): R. Häring; B. Sumpf; G. Erbert; G. Tränkle; F. Lison; W. G. Kaenders
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Paper Abstract

A master oscillator power amplifier system operating around 670 nm is presented. For the master laser an external cavity diode laser is used with an output power of 25 mW at tunable wavelength and with narrow line width. A tapered amplifier boosts the power up to 970 mW while maintaining the spectral characteristics and keeping the beam quality close to the diffraction limit. The performance of the laser system is presented and a Lithium spectrum depicting the suitability of the system for Lithium spectroscopy, cooling and trapping.

Paper Details

Date Published: 8 February 2007
PDF: 6 pages
Proc. SPIE 6485, Novel In-Plane Semiconductor Lasers VI, 648516 (8 February 2007); doi: 10.1117/12.697574
Show Author Affiliations
R. Häring, TOPTICA Photonics AG (Germany)
B. Sumpf, Ferdinand-Braun-Institut für Höchstfrequenztechnik (Germany)
G. Erbert, Ferdinand-Braun-Institut für Höchstfrequenztechnik (Germany)
G. Tränkle, Ferdinand-Braun-Institut für Höchstfrequenztechnik (Germany)
F. Lison, TOPTICA Photonics AG (Germany)
W. G. Kaenders, TOPTICA Photonics AG (Germany)


Published in SPIE Proceedings Vol. 6485:
Novel In-Plane Semiconductor Lasers VI
Carmen Mermelstein; David P. Bour, Editor(s)

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