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Proceedings Paper

Integration of high-efficiency PIN organic light-emitting devices in lighting and optoelectronic applications
Author(s): J. Amelung; M. Toerker; Y. Tomita; D. Kreye; C. Grillberger; U. Vogel; A. Elgner; M. Eritt; Ch. May; U. Todt; C. Luber; R. Hermann; Ch. Zschippang; K. Leo
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Paper Abstract

Displays based on organic light-emitting diodes (OLED) have rapidly developed and are commercially available since some time. However, in order to achieve large market penetration in new segments like lighting and optoelectronic, it is generally expected that the current status of the field has to advance in terms of manufacturing cost and integration possibilities. OLED devices with electrically doped transport layers show low operating voltage, high efficiency and long lifetime. In this paper we demonstrate that the concept of p- and n-type electrical doping can be applied under manufacturing conditions on the worldwide first vertical in-line fabrication setup for large area lighting applications. An in-linemanufactured highly efficient white-OLED-system will be presented. The driving of large area lighting tiles defines the resulting OLED lifetime and efficiency. In this paper we will present first results on the driving of large area lighting panels. Beside the lighting application the integration of highly efficient OLEDs for optoelectronic applications is an opportunity for innovative new applications. Microdisplays, integrated optocoupler and light barriers are few examples for the potential of OLEDs in optoelectronic applications. We will present results regarding the integration of highly efficient top-emitting PIN OLEDsTM for optoelectronic applications.

Paper Details

Date Published: 8 February 2007
PDF: 11 pages
Proc. SPIE 6486, Light-Emitting Diodes: Research, Manufacturing, and Applications XI, 64860C (8 February 2007); doi: 10.1117/12.697341
Show Author Affiliations
J. Amelung, Fraunhofer-Institute for Photonic Microsystems (Germany)
M. Toerker, Fraunhofer-Institute for Photonic Microsystems (Germany)
Y. Tomita, Fraunhofer-Institute for Photonic Microsystems (Germany)
D. Kreye, Fraunhofer-Institute for Photonic Microsystems (Germany)
C. Grillberger, Fraunhofer-Institute for Photonic Microsystems (Germany)
U. Vogel, Fraunhofer-Institute for Photonic Microsystems (Germany)
A. Elgner, Fraunhofer-Institute for Photonic Microsystems (Germany)
M. Eritt, Fraunhofer-Institute for Photonic Microsystems (Germany)
Ch. May, Fraunhofer-Institute for Photonic Microsystems (Germany)
U. Todt, Fraunhofer-Institute for Photonic Microsystems (Germany)
C. Luber, Fraunhofer-Institute for Photonic Microsystems (Germany)
R. Hermann, Fraunhofer-Institute for Photonic Microsystems (Germany)
Ch. Zschippang, Fraunhofer-Institute for Photonic Microsystems (Germany)
K. Leo, Fraunhofer-Institute for Photonic Microsystems (Germany)
Technical Univ., Dresden (Germany)


Published in SPIE Proceedings Vol. 6486:
Light-Emitting Diodes: Research, Manufacturing, and Applications XI
Klaus P. Streubel; Heonsu Jeon, Editor(s)

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