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Proceedings Paper

New results of InGaN LED simulation
Author(s): O. I. Rabinovich; S. G. Nikiforov; V. P. Sushkov; A. V. Shishov
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Paper Abstract

Blue and green LEDs have been simulated. Changing LED performance characteristics, depending on In concentration and at different temperatures were simulated. It was suggested that a LED having p-n junction area S0 can be considered as a sum of "SmallLEDs (SLEDs)" electrically connected in parallel, each SLED has its own In-content and its own p-n junction area S(X). Values of ratio S(X)/S0 are described by Gauss distribution function in the range X = 0.15-0.25 for blue LEDs and X = 0.25-0.35 for green LEDs. Reasonable correspondence of simulation and experimental results (current-voltage characteristic (C-V Ch), Spectral Ch) can be observed.

Paper Details

Date Published: 22 March 2007
PDF: 10 pages
Proc. SPIE 6468, Physics and Simulation of Optoelectronic Devices XV, 64680U (22 March 2007); doi: 10.1117/12.697272
Show Author Affiliations
O. I. Rabinovich, Technological Univ., Moscow State Institute of Steel and Alloys (Russia)
S. G. Nikiforov, ATV Outdoor Systems (Russia)
V. P. Sushkov, Technological Univ., Moscow State Institute of Steel and Alloys (Russia)
A. V. Shishov, Acol Technologies S.A. (Russia)


Published in SPIE Proceedings Vol. 6468:
Physics and Simulation of Optoelectronic Devices XV
Marek Osinski; Fritz Henneberger; Yasuhiko Arakawa, Editor(s)

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