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Proceedings Paper

Modeling of GaN based resonant-cavity light-emitting diode
Author(s): Z. Simon Li; Z. Q. Li; Ray-Hua Horng
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Paper Abstract

We extended the theory by Henry [1] to accurately treat the coupling of spontaneous emission noise with microcavity modes. The Green's function method is employed to solve the inhomogeneous wave equation including a Langevin force f&comega; which accounts for spontaneous emission by carriers at angular frequency &comega;. The optical wave equation is coupled with the self-consistent calculations of the material spontaneous emission rate of quantum well/dot using envelope wavefunction method. Finally the carrier transport equations are solved within the framework of 2D/3D drift-diffusion model implemented in the Crosslight Software package APSYS [2]. The simulation results of a GaN based resonant-cavity light-emitting diode (RC-LED) showed that our models can be used to predict the characteristics of RC-LED.

Paper Details

Date Published: 13 February 2007
PDF: 7 pages
Proc. SPIE 6486, Light-Emitting Diodes: Research, Manufacturing, and Applications XI, 64860S (13 February 2007); doi: 10.1117/12.696651
Show Author Affiliations
Z. Simon Li, Crosslight Software Inc. (Canada)
Z. Q. Li, Crosslight Software Inc. (Canada)
Ray-Hua Horng, National Chung Hsing Univ. (Taiwan)


Published in SPIE Proceedings Vol. 6486:
Light-Emitting Diodes: Research, Manufacturing, and Applications XI
Klaus P. Streubel; Heonsu Jeon, Editor(s)

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