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Proceedings Paper

Growth of GaN on ZnO for solid state lighting applications
Author(s): Nola Li; Eun-Hyun Park; Yong Huang; Shenjie Wang; Adriana Valencia; Bill Nemeth; Jeff Nause; Ian Ferguson
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Paper Abstract

In this work, ZnO has been investigated as a substrate technology for GaN-based devices due to its close lattice match, stacking order match, and similar thermal expansion coefficient. Since MOCVD is the dominant growth technology for GaN-based materials and devices, there is a need to more fully explore this technique for ZnO substrates. Our aim is to grow low defect density GaN for efficient phosphor free white emitters. However, there are a number of issues that need to be addressed for the MOCVD growth of GaN on ZnO. The thermal stability of the ZnO substrate, out-diffusion of Zn from the ZnO into the GaN, and H2 back etching into the substrate can cause growth of poor quality GaN. Cracks and pinholes were seen in the epilayers, leading to the epi-layer peeling off in some instances. These issues were addressed by the use of H2 free growth and multiple buffer layers to remove the cracking and reduce the pinholes allowing for a high quality GaN growth on ZnO substrate.

Paper Details

Date Published: 12 September 2006
PDF: 6 pages
Proc. SPIE 6337, Sixth International Conference on Solid State Lighting, 63370Z (12 September 2006); doi: 10.1117/12.696645
Show Author Affiliations
Nola Li, Georgia Institute of Technology (United States)
Eun-Hyun Park, Georgia Institute of Technology (United States)
Yong Huang, Georgia Institute of Technology (United States)
Shenjie Wang, Georgia Institute of Technology (United States)
Adriana Valencia, Cermet, Inc. (United States)
Bill Nemeth, Cermet, Inc. (United States)
Jeff Nause, Cermet, Inc. (United States)
Ian Ferguson, Georgia Institute of Technology (United States)

Published in SPIE Proceedings Vol. 6337:
Sixth International Conference on Solid State Lighting
Ian T. Ferguson; Nadarajah Narendran; Tsunemasa Taguchi; Ian E. Ashdown, Editor(s)

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