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Proceedings Paper

Spontaneous polarizations, electrical properties, and phononic properties of GaN nanostructures and systems
Author(s): Takayuki Yamanaka; Ke Sun; Yang Li; Mitra Dutta; Michael A. Stroscio
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Paper Abstract

Spontaneous polarizations of GaN nanostructures and quantum dots are calculated for different surface terminations. In addition, dimensionally-confined phonons in GaN-based nanostructures are discussed. GaN-based nanostructures have applications in a variety of systems and concepts including: non-charge-transfer-based devices and single-photon detectors based on GaN-based double-barrier quantum-well injectors, conductive-polymer collectors, and colloidal quantum dot recombination regions. In this paper, application of photodetectors is considered along with the related application of using colloidal quantum-dot-based ensembles for solar cell applications.

Paper Details

Date Published: 8 February 2007
PDF: 14 pages
Proc. SPIE 6473, Gallium Nitride Materials and Devices II, 64730F (8 February 2007); doi: 10.1117/12.696291
Show Author Affiliations
Takayuki Yamanaka, Univ. of Illinois at Chicago (United States)
Ke Sun, Univ. of Illinois at Chicago (United States)
Yang Li, Univ. of Illinois at Chicago (United States)
Mitra Dutta, Univ. of Illinois at Chicago (United States)
Michael A. Stroscio, Univ. of Illinois at Chicago (United States)


Published in SPIE Proceedings Vol. 6473:
Gallium Nitride Materials and Devices II
Hadis Morkoc; Cole W. Litton, Editor(s)

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