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Proceedings Paper

Effect of annealing temperature on the formation of silicon nanocrystals in a nitride matrix
Author(s): Giuseppe Scardera; Tom Puzzer; Ed Pink; Gavin Conibeer; Martin A. Green
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Paper Abstract

Superlattices of silicon nanocrystals or quantum dots (QDs) are fabricated by depositing alternating layers of stoichiometric and sub-stoichiometric silicon nitride by dual-mode PECVD and subsequent high temperature annealing. NH3, SiH4 and Ar are used as processing gases. The formation of QDs is monitored for varying annealing temperatures using TEM and GI-XRD. Samples composed of 50 bi-layers are grown under the same conditions and annealed for two hours at temperatures ranging between 600 and 1150°C. A 50 bi-layer superlattice structure of silicon nanocrystals with an estimated average grain size of approximately 4 nm was achieved at 1000°C. The use of FTIR spectroscopy as a complementary technique for verifying the formation of silicon nanocrystals in a nitride matrix is investigated. The IR absorbance spectra for samples containing silicon nanocrystals show a distinct shoulder at 1080 cm-1 corresponding to the Si-O-Si stretching mode possibly due to oxidation. Preliminary evidence is also presented showing the possible formation of α-Si3N4 nanocrystals at 1100 and 1150°C.

Paper Details

Date Published: 20 December 2006
PDF: 12 pages
Proc. SPIE 6415, Micro- and Nanotechnology: Materials, Processes, Packaging, and Systems III, 641502 (20 December 2006); doi: 10.1117/12.695760
Show Author Affiliations
Giuseppe Scardera, Univ. of New South Wales (Australia)
Tom Puzzer, Univ. of New South Wales (Australia)
Ed Pink, Univ. of New South Wales (Australia)
Gavin Conibeer, Univ. of New South Wales (Australia)
Martin A. Green, Univ. of New South Wales (Australia)


Published in SPIE Proceedings Vol. 6415:
Micro- and Nanotechnology: Materials, Processes, Packaging, and Systems III
Jung-Chih Chiao; Andrew S. Dzurak; Chennupati Jagadish; David Victor Thiel, Editor(s)

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