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Proceedings Paper

GaN/AlN multiple quantum well structures grown by MBE on GaN templates for 1.55 µm intersubband absorption
Author(s): T. Aggerstam; T. G. Andersson; P. Holmström; P. Jänes; X. Y. Liu; S. Lourdudoss; L. Thylén
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Paper Abstract

We have used MBE to grow MQW structures on MOVPE GaN/sapphire templates. The MQW devices are intended for high speed intersubband electroabsorption modulator devices operating at 1.55-&mgr;m. The GaN/AlN multiple quantum well material was systematically studied regarding the surface morphology, structural characterization and optical property by atomic force microscopy, X-ray diffraction and Fourier transform infrared spectroscopy, respectively. The intersubband resonance energy was also calculated considering many-body effects in n-type doped structures. The multiple quantum well structure showed superior performance in terms of linewidth when grown on GaN templates as compared on sapphire. GaN quantum well and AlN barriers with a thickness of 3.3 and 4.2 nm respectively resulted in FWHM of the intersubband absorption peak as low as 93 meV at an absorption energy of 700 meV. This is promising for intersubband modulator applications.

Paper Details

Date Published: 21 February 2007
PDF: 12 pages
Proc. SPIE 6479, Quantum Sensing and Nanophotonic Devices IV, 64791E (21 February 2007); doi: 10.1117/12.695457
Show Author Affiliations
T. Aggerstam, Royal Institute of Technology, KTH (Sweden)
T. G. Andersson, Chalmers Univ. of Technology (Sweden)
P. Holmström, Royal Institute of Technology, KTH (Sweden)
P. Jänes, Royal Institute of Technology, KTH (Sweden)
X. Y. Liu, Chalmers Univ. of Technology (Sweden)
S. Lourdudoss, Royal Institute of Technology, KTH (Sweden)
L. Thylén, Royal Institute of Technology, KTH (Sweden)

Published in SPIE Proceedings Vol. 6479:
Quantum Sensing and Nanophotonic Devices IV
Manijeh Razeghi; Gail J. Brown, Editor(s)

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