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Proceedings Paper

InGaN/GaN nanocolumn LEDs emitting from blue to red
Author(s): K. Kishino; A. Kikuchi; H. Sekiguchi; S. Ishizawa
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Paper Abstract

Self-assembled GaN nanocolumns were grown on sapphire and Si substrates by rf-plasma-assisted molecular-beam-epitaxy, clarifying the growth condition. The nanocolumn crystal showed a highly efficient photoluminescence (PL) emission at the room temperature, which intensity was 4 times stronger than that of a high-quality GaN substrate. InGaN/GaN quantum-disk nanocolumn LEDs were fabricated on n-type (111) Si substrates. For a macroscopic emission area of 500-&mgr;m-diameter, a broad electro-luminescence (EL) emission spectrum extending from the blue to the red region was observed. Microscopic EL measurement was performed for a 3-&mgr;m-diameter detection area, demonstrating a drastic spectral narrowing. In the microscopic EL spectrum, no blue shift of the emission wavelength was observed when the injection current increased. This suggests that the carrier localization or/and the piezo-electric field is minimized in nanocolumns. Selective growth of GaN nanocolumns was performed by use of patterned pre-deposited Al layers.

Paper Details

Date Published: 8 February 2007
PDF: 12 pages
Proc. SPIE 6473, Gallium Nitride Materials and Devices II, 64730T (8 February 2007); doi: 10.1117/12.695168
Show Author Affiliations
K. Kishino, Sophia Univ. (Japan)
Japan Science and Technology Agency (Japan)
A. Kikuchi, Sophia Univ. (Japan)
Japan Science and Technology Agency (Japan)
H. Sekiguchi, Sophia Univ. (Japan)
Japan Science and Technology Agency (Japan)
S. Ishizawa, Sophia Univ. (Japan)
Japan Science and Technology Agency (Japan)

Published in SPIE Proceedings Vol. 6473:
Gallium Nitride Materials and Devices II
Hadis Morkoc; Cole W. Litton, Editor(s)

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