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Proceedings Paper

Effect of argon annealing of phosphorus-doped ZnO and (Zn,Mg)O thin-films grown pulsed laser deposition
Author(s): Yuanjie Li; Hyun-Sik Kim; Jean-Marie Erie; Fan Ren; Stephen J. Pearton; David P. Norton
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Paper Abstract

The transport and annealing properties of phosphorus-doped (Zn,Mg)O thin films grown via pulsed laser deposition (PLD) are studied. The electron carrier concentration for (Zn,Mg)O:P films decreases with increasing deposition and Ar annealing temperature. All the films exhibit good crystallinity with c-axis orientation. This result indicates the importance of activation of the P dopant in (Zn,Mg)O:P films. The as-deposited ZnO:P film properties show less dependence on the deposition growth temperatures. The resistivity of the (Zn,Mg)O:P films is significantly higher than the ZnO:P films grown under similar conditions, indicating separation of the conduction band edge relative to the defect donor state. The annealed ZnO:P films are n-type with resistivity dependent on annealing temperature.

Paper Details

Date Published: 12 September 2006
PDF: 9 pages
Proc. SPIE 6337, Sixth International Conference on Solid State Lighting, 633708 (12 September 2006); doi: 10.1117/12.694798
Show Author Affiliations
Yuanjie Li, Univ. of Florida (United States)
Hyun-Sik Kim, Univ. of Florida (United States)
Jean-Marie Erie, Univ. of Florida (United States)
Fan Ren, Univ. of Florida (United States)
Stephen J. Pearton, Univ. of Florida (United States)
David P. Norton, Univ. of Florida (United States)


Published in SPIE Proceedings Vol. 6337:
Sixth International Conference on Solid State Lighting
Ian T. Ferguson; Nadarajah Narendran; Tsunemasa Taguchi; Ian E. Ashdown, Editor(s)

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