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Proceedings Paper

Diode-pumped Q-switched Nd:YVO4 laser with a low-temperature-grown GaAs saturable absorber
Author(s): Yu Gan; WangHua Xiang; ZhiGang Zhang; YongGang Wang; QiChang Jiang; Zhuang Zhuo
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Paper Abstract

A stable passively Q-switched Nd: YVO4 laser was demonstrated by use of a GaAs absorber grown at a low temperature (LT GaAs absorber) by the Metal Organic Chemical Vapor Deposition (MOCVD) technique, as well as an output coupler. The shortest pulse duration measured was about 12 ns with a single-pulse energy of 4.84 μJ, and the highest average output power is 1.16 W. The repetition rate is 360 KHz, which corresponds to the pump power of 2.8W.

Paper Details

Date Published: 10 June 2006
PDF: 6 pages
Proc. SPIE 6344, Advanced Laser Technologies 2005, 63440D (10 June 2006); doi: 10.1117/12.693399
Show Author Affiliations
Yu Gan, Tianjin Univ. (China)
WangHua Xiang, Tianjin Univ. (China)
ZhiGang Zhang, Tianjin Univ. (China)
YongGang Wang, Tianjin Univ. (China)
QiChang Jiang, Shandong Normal Univ. (China)
Zhuang Zhuo, Shandong Normal Univ. (China)


Published in SPIE Proceedings Vol. 6344:
Advanced Laser Technologies 2005

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