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Proceedings Paper

High brilliance photonic band crystal lasers
Author(s): V. A. Shchukin; N. N. Ledentsov; N. Yu. Gordeev; L. Ya. Karachinsky; N. V. Kryzhanovskaya; S. M. Kuznetsov; M. B. Lifshits; M. V. Maximov; I. I. Novikov; Yu. M. Shernyakov; T. Kettler; K. Posilovic; D. Bimberg
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Paper Abstract

High concentration of optical power in a narrow exit angle is extremely important for numerous applications of laser diodes, for example, for low-cost fiber pumping and coupling, material processing, direct frequency conversion, etc. Lasers based on the longitudinal photonic band crystal (PBC) concept allow a robust and controllable extension of the fundamental mode over a thick multi-layer waveguide region to achieve a very large vertical optical mode spot size and, consequently, a very narrow vertical beam divergence. Many undesirable effects like beam filamentation, lateral multimode operation and catastrophic optical mirror damage (COMD) are strongly reduced. 650 nm GaInP/GaAlInP PBC lasers show narrow far field pattern (FWHM~7°) stable up to the highest output powers. Differential efficiency up to 85% is demonstrated. Total single mode output power as high as 150 mW is achieved in 4 μm-wide stripes in continuous wave operation, being limited by COMD due to not passivated facets. The lateral far field FWHM is 4 degrees. 840 nm GaAs/GaAlAs PBC lasers show a vertical beam divergence of 8° (FWHM) and a high differential efficiency up to 95% (L=500 μm). A total single mode CW power approaches 500 mW for 1 mm-long 4 μm-wide stripes devices at ~500 mA current, being COMD-limited. The lateral far field FWHM is 5 degrees. Another realization of a longitudinal PBC laser allows lasing in a single high-order vertical mode, a so-called tilted mode, which provides wavelength selectivity and substantially extends the possibility to control the thermal shift of the lasing wavelength. In a multilayer laser structure, where the refractive index of each layer increases upon temperature, it is possible to reach both a red shift of the lasing wavelength for some realizations of the structures, and a blue shift for some others. Most important, the absolute thermal stabilization of the lasing wavelength of a semiconductor laser can be realized.

Paper Details

Date Published: 12 July 2006
PDF: 15 pages
Proc. SPIE 6350, Workshop on Optical Components for Broadband Communication, 635005 (12 July 2006); doi: 10.1117/12.693348
Show Author Affiliations
V. A. Shchukin, Technische Univ. Berlin (Germany)
N. N. Ledentsov, Technische Univ. Berlin (Germany)
N. Yu. Gordeev, Abraham Ioffe Physical Technical Institute (Russia)
L. Ya. Karachinsky, Technische Univ. Berlin (Germany)
Abraham Ioffe Physical Technical Institute (Russia)
N. V. Kryzhanovskaya, Abraham Ioffe Physical Technical Institute (Russia)
S. M. Kuznetsov, Abraham Ioffe Physical Technical Institute (Russia)
M. B. Lifshits, Technische Univ. Berlin (Germany)
Abraham Ioffe Physical Technical Institute (Russia)
M. V. Maximov, Abraham Ioffe Physical Technical Institute (Russia)
I. I. Novikov, Abraham Ioffe Physical Technical Institute (Russia)
Yu. M. Shernyakov, Abraham Ioffe Physical Technical Institute (Russia)
T. Kettler, Technische Univ. Berlin (Germany)
K. Posilovic, Technische Univ. Berlin (Germany)
D. Bimberg, Technische Univ. Berlin (Germany)


Published in SPIE Proceedings Vol. 6350:
Workshop on Optical Components for Broadband Communication
Pierre-Yves Fonjallaz; Thomas P. Pearsall, Editor(s)

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