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Proceedings Paper

Mathematical modeling dependences of intensity monochromatic cathodeluminescence from electron beam energy for two-layer semiconductor structure
Author(s): M. G. Snopova; A. G. Khokhlov; N. N. Mikheev; M. A. Stepovich
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Paper Abstract

New opportunities of modelling of dependence of intensity monochromatic cathodeluminescence from electron beam energy for two-layer semiconductor structure on the basis of GaAs are considered, diffusion of nonbasic carriers of a charge in which is described with use of model of independent sources.

Paper Details

Date Published: 31 May 2006
PDF: 6 pages
Proc. SPIE 6278, Seventh Seminar on Problems of Theoretical and Applied Electron and Ion Optics, 62780O (31 May 2006); doi: 10.1117/12.693220
Show Author Affiliations
M. G. Snopova, Moscow Bauman State Technical Univ. (Russia)
A. G. Khokhlov, Moscow Bauman State Technical Univ. (Russia)
Univ. Leipzig (Germany)
N. N. Mikheev, Shubnikov State Institute of Crystallography (Russia)
M. A. Stepovich, Kaluga Tsiolkovsky State Pedagogical Univ. (Russia)


Published in SPIE Proceedings Vol. 6278:
Seventh Seminar on Problems of Theoretical and Applied Electron and Ion Optics
Anatoly M. Filachev, Editor(s)

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