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Proceedings Paper

Combined resist and etch modeling and correction for the 45-nm node
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Paper Abstract

Emerging resist and etch process technologies for the 45 nm node exhibit new types of non-optical proximity errors, thus placing new demands on OPC modeling tools. In a previous paper (SPIE Vol. 6283-75) we had experimentally demonstrated a full resist and etch model calibration and verified the stability of the model using 45nm node standard logic cells. The etch model used a novel non-linear etch modeling object in combination with conventional convolution Kernels. Building upon those results, this paper focuses on the correction of patterns. We demonstrate a two-stage optical/resist and etch correction using calibrated models, including the use of non-linear etch modeling objects. Optical/resist and etch models are built separately and used sequentially to correct a 45nm logic pattern. Critical areas of the pattern affected by etch are analyzed and used to verify the correction. Verification of the correction is obtained through comparison between the simulated contours with the design intent.

Paper Details

Date Published: 20 October 2006
PDF: 11 pages
Proc. SPIE 6349, Photomask Technology 2006, 634921 (20 October 2006); doi: 10.1117/12.693080
Show Author Affiliations
Martin Drapeau, Synopsys, Inc. (Belgium)
Dan Beale, Synopsys, Inc. (United States)

Published in SPIE Proceedings Vol. 6349:
Photomask Technology 2006
Patrick M. Martin; Robert J. Naber, Editor(s)

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