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Proceedings Paper

Nonlithographic nanostructure devices and circuits
Author(s): B. Das; A. Banerjee
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Paper Abstract

We have developed an ultra-high vacuum technique for the fabrication of complex nanosystems incorporating nonlithographic nanoparticles, ohmic contact metals and isolation dielectrics. It is believed that such a multi-component structure is a necessary prerequisite for the realization of practical photonic and electronic devices based on nanoparticles. The technique is compatible with silicon integrated circuit technology, thus making it suitable for volume manufacturing. The technique is also versatile, and allows the deposition of nanoparticles of any metal, semiconductor or insulator with diameters as small as 2 nm with less than 5% size variation. In addition, the technique allows the creation of multi-layered structures of nanoparticles of different dimensions separated by metal or dielectric layers. The technique also has the potential for creating patterned layers of nanopartciles. We have demonstrated the versatility of the equipment by depositing Si-nanoparticles with pre-selected narrow size-distributions as well as multi-layered structures of such nanoparticles.

Paper Details

Date Published: 19 October 2006
PDF: 7 pages
Proc. SPIE 6370, Nanomaterial Synthesis and Integration for Sensors, Electronics, Photonics, and Electro-Optics, 637016 (19 October 2006); doi: 10.1117/12.692997
Show Author Affiliations
B. Das, Univ. of Nevada, Las Vegas (United States)
A. Banerjee, Univ. of Nevada, Las Vegas (United States)


Published in SPIE Proceedings Vol. 6370:
Nanomaterial Synthesis and Integration for Sensors, Electronics, Photonics, and Electro-Optics
Nibir K. Dhar; Achyut K. Dutta; M. Saif Islam, Editor(s)

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