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Proceedings Paper

PAB and PEB temperature gradient methodology for CAR optimization
Author(s): Thuc H. Dam; Andrew Jamieson; Maiying Lu; Ki-Ho Baik
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Paper Abstract

Chemically amplified resist (CAR) performance can be greatly influenced by post apply bake (PAB) and post exposure bake (PEB) conditions. The difficulty with optimizing these conditions for photomask process is cost and time. In typical wafer CAR resist development, multiple wafer splits and skews can be rapidly processed with relatively low cost and fast turn around time, whereas in photomask processing each ebeam-written mask with a set of DOE conditions can be expensive and time consuming to produce. This paper discusses a novel mask design and testing methodology that allow for many combinations of PEB and PAB conditions to be evaluated with one mask. In brief, this methodology employs orthogonal PAB and PEB thermal gradients across a plate. Some thermal profile, darkloss, resist top down critical dimensions (CD), and SEM cross section image results will be shared and discussed.

Paper Details

Date Published: 20 October 2006
PDF: 11 pages
Proc. SPIE 6349, Photomask Technology 2006, 634906 (20 October 2006); doi: 10.1117/12.692939
Show Author Affiliations
Thuc H. Dam, Intel Mask Operations (United States)
Andrew Jamieson, Intel Mask Operations (United States)
Maiying Lu, Intel Mask Operations (United States)
Ki-Ho Baik, Intel Mask Operations (United States)


Published in SPIE Proceedings Vol. 6349:
Photomask Technology 2006
Patrick M. Martin; Robert J. Naber, Editor(s)

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