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Proceedings Paper

Application of Dosemapper for 65-nm gate CD control: strategies and results
Author(s): Nazneen Jeewakhan; Nader Shamma; Sang-Jun Choi; Roque Alvarez; D. H. Son; Makoto Nakamura; Vinny Pici; Jim Schreiber; Wei-shun Tzeng; Sean Ang; Daniel Park
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Paper Abstract

Aggressive line width control requirements for leading edge IC fabrication necessitate integration of novel techniques such as DoseMapper into the lithography process flow. DoseMapper is based on the simple concept that CD uniformity (CDU) can be improved through compensation of CD errors by using the scanner actuators. Specifically, the DoseMapper system allows for compensation of interfield and intrafield CD non-uniformity, based on the spatial distribution of in-line CD measurements or end-of-line electrical parameters for a stable process. This approach is supported by the fact that small variations of linewidth are correlated to exposure dose in a linear fashion. In this work we describe strategies for and results of the application of DoseMapper in a lithographic process for gate layer in a 65nm technology. We will highlight the potential strengths and weaknesses of various DoseMapper strategies to. For instance, we have learned that dose adjustments which are based on post-etch CD signature can lead to degradation of the lithography-based process window especially for 2 -dimensional features due to high MEEF. Therefore, it is asserted that application of DoseMapper in a high-volume manufacturing process requires consideration of such rational tradeoffs as mentioned above. Impact of Mask CD variation on DoseMapper effectiveness will also be discussed. This has the potential to have a significant impact on manufacturability of photo masks for the 65nm node and beyond

Paper Details

Date Published: 20 October 2006
PDF: 11 pages
Proc. SPIE 6349, Photomask Technology 2006, 63490G (20 October 2006); doi: 10.1117/12.692938
Show Author Affiliations
Nazneen Jeewakhan, Cypress Semiconductor (United States)
Nader Shamma, Cypress Semiconductor (United States)
Sang-Jun Choi, Cypress Semiconductor (United States)
Roque Alvarez, Cypress Semiconductor (United States)
D. H. Son, ASML (United States)
Makoto Nakamura, ASML (United States)
Vinny Pici, ASML (United States)
Jim Schreiber, ASML (United States)
Wei-shun Tzeng, ASML (United States)
Sean Ang, ASML (United States)
Daniel Park, ASML (United States)


Published in SPIE Proceedings Vol. 6349:
Photomask Technology 2006
Patrick M. Martin; Robert J. Naber, Editor(s)

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