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Proceedings Paper

A novel electrical and optical confinement scheme for surface emitting optoelectronic devices
Author(s): R. Marcks von Würtemberg; Z. Zhang; J. Berggren; M. Hammar
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Paper Abstract

A novel electrical and optical confinement scheme for surface emitting optoelectronic devices is presented. The scheme is based on epitaxial regrowth of a pnp current blocking layer structure around a mesa etched in the vertical cavity region of the device. The lateral size and orientation of the mesa is defined lithographically and dry etching is used to create vertical mesa sidewalls. By orienting the mesa sidewalls in certain crystallographic directions, it is possible to selectively grow a current blocking pnp layer structure on the exposed n-type lower cladding layer of the cavity whithout obstructing the electrical injection into the active region. The concept is evaluated in 1.2-μm GaAs-based light emitting diodes with InGaAs quantum wells. This type of structure can easily be used as the amplifying region of a vertical cavity laser, providing a good alternative to selective oxidation confinement.

Paper Details

Date Published: 6 July 2006
PDF: 10 pages
Proc. SPIE 6350, Workshop on Optical Components for Broadband Communication, 63500J (6 July 2006); doi: 10.1117/12.692904
Show Author Affiliations
R. Marcks von Würtemberg, Royal Institute of Technology (Sweden)
Z. Zhang, Royal Institute of Technology (Sweden)
J. Berggren, Royal Institute of Technology (Sweden)
M. Hammar, Royal Institute of Technology (Sweden)


Published in SPIE Proceedings Vol. 6350:
Workshop on Optical Components for Broadband Communication
Pierre-Yves Fonjallaz; Thomas P. Pearsall, Editor(s)

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