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Proceedings Paper

Correcting lithography hot spots during physical-design implementation
Author(s): Gerard T. Luk-Pat; Alexander Miloslavsky; Atsuhiko Ikeuchi; Hiroaki Suzuki; Suigen Kyoh; Kyoko Izuha; Frank Tseng; Linni Wen
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Paper Abstract

As the technology node shrinks, printed-wafer shapes show progressively less similarity to the design-layout shapes, even with optical proximity correction (OPC). Design tools have a restricted ability to address this shape infidelity. Their understanding of lithography effects is limited, taking the form of design rules that try to prevent "Hot Spots" - locations that demonstrate wafer-printing problems. These design rules are becoming increasingly complex and therefore less useful in addressing the lithography challenges. Therefore, design tools that have a better understanding of lithography are becoming a necessity for technology nodes of 65 nm and below. The general goal of this work is to correct lithography Hot Spots during physical-design implementation. The specific goal is to automatically fix a majority of the Hot Spots in the Metal 2 layers and above, with a run time on the order of a few hours per layer. Three steps were taken to achieve this goal. First, Hot Spot detection was made faster by using rule-based detection. Second, Hot Spot correction was automated by using rule-based correction. Third, convergence of corrections was avoided by performing correction locally, which means that correcting one Hot Spot was very unlikely to create new Hot Spots.

Paper Details

Date Published: 20 October 2006
PDF: 9 pages
Proc. SPIE 6349, Photomask Technology 2006, 634920 (20 October 2006); doi: 10.1117/12.692865
Show Author Affiliations
Gerard T. Luk-Pat, Synopsys, Inc. (United States)
Alexander Miloslavsky, Synopsys, Inc. (United States)
Atsuhiko Ikeuchi, Toshiba Corp. (Japan)
Hiroaki Suzuki, Toshiba Corp. (Japan)
Suigen Kyoh, Toshiba Corp. (Japan)
Kyoko Izuha, Toshiba Corp. (Japan)
Frank Tseng, Synopsys, Inc. (United States)
Linni Wen, Synopsys, Inc. (United States)

Published in SPIE Proceedings Vol. 6349:
Photomask Technology 2006
Patrick M. Martin; Robert J. Naber, Editor(s)

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