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Proceedings Paper

Mask absorber material dependence of 2D OPC in ArF high NA lithography
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Paper Abstract

Rigorous optical proximity correction (OPC) for 3D reticle effects is critical to the success of 193nm wavelength immersion lithography implementation. The impact of 2D and 3D mask polarization and shadowing effects to 2D imaging in ultra high Numerical Aperture (NA) low-k1 imaging is assessed by simulation. An end-to-end (ETE) dense line 2D feature of various embedded (attenuated) phase shift mask (ePSM) with various material of film stack is studied. Line-end pullback is shown correlated with mask shadowing under TE-polarized OAI. Polarized OAI phase calibrated thinner mask absorber provides less shadowing, better 2D imaging window, and enables further scaling of mask feature patterning.

Paper Details

Date Published: 21 June 2006
PDF: 10 pages
Proc. SPIE 6281, 22nd European Mask and Lithography Conference, 62810V (21 June 2006); doi: 10.1117/12.692807
Show Author Affiliations
Wen-Hao Cheng, Intel Corp. (United States)
Jeff Farnsworth, Intel Corp. (United States)


Published in SPIE Proceedings Vol. 6281:
22nd European Mask and Lithography Conference
Uwe F. W. Behringer, Editor(s)

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